Structure having spatially separated photo-excitable electron-hole pairs and method of manufacturing same
Patent
·
OSTI ID:908273
- Richland, WA
- Kennewick, WA
A method for producing quantum dots. The method includes cleaning an oxide substrate and separately cleaning a metal source. The substrate is then heated and exposed to the source in an oxygen environment. This causes metal oxide quantum dots to form on the surface of the substrate.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- Assignee:
- Battelle Memorial Institute (Richland, WA)
- Patent Number(s):
- 7,094,675
- Application Number:
- 10/340,502
- OSTI ID:
- 908273
- Country of Publication:
- United States
- Language:
- English
An atomic force microscopy study of thin copper oxide films grown by molecular beam epitaxy on MgO(100)
|
journal | August 1996 |
Tailor made synthesis of Q-TiO2 powder by using quantum dots as building blocks
|
journal | April 1998 |
Heteroepitaxial growth of α-Fe2O3, γ-Fe2O3 and Fe3O4 thin films by oxygen-plasma-assisted molecular beam epitaxy
|
journal | April 1997 |
Molecular beam epitaxy growth of CuO and Cu2O films with controlling the oxygen content by the flux ratio of Cu/O+
|
journal | October 1994 |
Similar Records
Structure having spatially separated photo-excitable electron-hole pairs and method of manufacturing same
Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
Biexcitons formed from spatially separated electrons and holes in quasi-zero-dimensional semiconductor nanosystems
Patent
·
Tue Mar 18 00:00:00 EST 2003
·
OSTI ID:908273
+1 more
Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
Patent
·
Tue Jul 06 00:00:00 EDT 1993
·
OSTI ID:908273
Biexcitons formed from spatially separated electrons and holes in quasi-zero-dimensional semiconductor nanosystems
Journal Article
·
Sun Dec 15 00:00:00 EST 2013
· Semiconductors
·
OSTI ID:908273