Mutual Passivation in Dilulte GaNxAs1-x Alloys
The dilute GaN{sub x}As{sub 1-x} alloys (with x up to 0.05) have exhibited many unusual properties as compared to the conventional binary and ternary semiconductor alloys. We report on a new effect in the GaN{sub x}As{sub 1-x} alloy system in which electrically active substitutional group IV donors and isoelectronic N atoms passivate each other's activity. This mutual passivation occurs in dilute GaN{sub x}As{sub 1-x} doped with group IV donors through the formation of nearest neighbor IV{sub Ga-}N{sub As} pairs when the samples are annealed under conditions such that the diffusion length of the donors is greater than or equal to the average distance between donor and N atoms. The passivation of the shallow donors and the N{sub As} atoms is manifested in a drastic reduction in the free electron concentration and, simultaneously, an increase in the fundamental band gap. This mutual passivation effect is demonstrated in both Si and Ge doped GaN{sub x}As{sub 1-x} alloys. Analytical calculations of the passivation process based on Ga vacancies mediated diffusion show good agreement with the experimental results.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of High Energy andNuclear Physics. Office of Basic Energy Sciences. Materials Sciences andEngineering Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 908161
- Report Number(s):
- LBNL-57336; R&D Project: 513320; BnR: KC0201030; TRN: US200722%%507
- Resource Relation:
- Conference: 2005 Materials Research Society Spring Meeting,San Francisco, CA, March 28-April 1, 2005
- Country of Publication:
- United States
- Language:
- English
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