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Title: Thermal conductivity measurements of Summit polycrystalline silicon.

Abstract

A capability for measuring the thermal conductivity of microelectromechanical systems (MEMS) materials using a steady state resistance technique was developed and used to measure the thermal conductivities of SUMMiT{trademark} V layers. Thermal conductivities were measured over two temperature ranges: 100K to 350K and 293K to 575K in order to generate two data sets. The steady state resistance technique uses surface micromachined bridge structures fabricated using the standard SUMMiT fabrication process. Electrical resistance and resistivity data are reported for poly1-poly2 laminate, poly2, poly3, and poly4 polysilicon structural layers in the SUMMiT process from 83K to 575K. Thermal conductivity measurements for these polysilicon layers demonstrate for the first time that the thermal conductivity is a function of the particular SUMMiT layer. Also, the poly2 layer has a different variation in thermal conductivity as the temperature is decreased than the poly1-poly2 laminate, poly3, and poly4 layers. As the temperature increases above room temperature, the difference in thermal conductivity between the layers decreases.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
897917
Report Number(s):
SAND2006-7112
TRN: US200705%%428
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FABRICATION; SILICON; THERMAL CONDUCTIVITY; MICROELECTRONICS; POLYCRYSTALS; ELECTRIC CONDUCTIVITY; Polycrystalline; Thermal conductivity.; Microelectromechanical systems.

Citation Formats

Clemens, Rebecca, Kuppers, Jaron D, and Phinney, Leslie Mary. Thermal conductivity measurements of Summit polycrystalline silicon.. United States: N. p., 2006. Web. doi:10.2172/897917.
Clemens, Rebecca, Kuppers, Jaron D, & Phinney, Leslie Mary. Thermal conductivity measurements of Summit polycrystalline silicon.. United States. https://doi.org/10.2172/897917
Clemens, Rebecca, Kuppers, Jaron D, and Phinney, Leslie Mary. 2006. "Thermal conductivity measurements of Summit polycrystalline silicon.". United States. https://doi.org/10.2172/897917. https://www.osti.gov/servlets/purl/897917.
@article{osti_897917,
title = {Thermal conductivity measurements of Summit polycrystalline silicon.},
author = {Clemens, Rebecca and Kuppers, Jaron D and Phinney, Leslie Mary},
abstractNote = {A capability for measuring the thermal conductivity of microelectromechanical systems (MEMS) materials using a steady state resistance technique was developed and used to measure the thermal conductivities of SUMMiT{trademark} V layers. Thermal conductivities were measured over two temperature ranges: 100K to 350K and 293K to 575K in order to generate two data sets. The steady state resistance technique uses surface micromachined bridge structures fabricated using the standard SUMMiT fabrication process. Electrical resistance and resistivity data are reported for poly1-poly2 laminate, poly2, poly3, and poly4 polysilicon structural layers in the SUMMiT process from 83K to 575K. Thermal conductivity measurements for these polysilicon layers demonstrate for the first time that the thermal conductivity is a function of the particular SUMMiT layer. Also, the poly2 layer has a different variation in thermal conductivity as the temperature is decreased than the poly1-poly2 laminate, poly3, and poly4 layers. As the temperature increases above room temperature, the difference in thermal conductivity between the layers decreases.},
doi = {10.2172/897917},
url = {https://www.osti.gov/biblio/897917}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Nov 01 00:00:00 EST 2006},
month = {Wed Nov 01 00:00:00 EST 2006}
}