Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster)

Conference · Mon May 01 00:00:00 EDT 2006

OSTI ID:893117

Jiang, C -S; Friedman, D J; Moutinho, H R; Al-Jassim, M M

We have observed three electrical potentials at the top, tunneling, and bottom junctions of GnInP{sub 2}/GaAs tandem-junction solar cells, by performing the UHV-SKPM measurement. The effect of laser illumination was avoided by using GaAs laser with photon energy of 1.4 eV for the AFM operation. We also observed higher potentials at the atomic steps than on the terraces for both p-type GaInP{sub 2} epitaxial layer and p-type GaAs substrate, and found that the potential at steps of GaAs substrate depends on the step directions.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99-GO10337
• OSTI ID: 893117
• Report Number(s): NREL/PO-520-39864; TRN: US200625%%96
• Resource Relation: Conference: Prepared for the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), 7-12 May 2006, Waikoloa, Hawaii
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ENERGY CONVERSION
ILLUMINANCE
LASERS
PHOTONS
SOLAR CELLS
SUBSTRATES
TUNNELING
SOLAR ENERGY
III-V MULTIJUNCTION
PHOTOVOLTAIC
MEASUREMENT
Solar Energy - Photovoltaics
Silicon Materials and Devices