Niobium Oxide Film Deposition Using a High-Density Plasma Source
Niobium oxide was deposited reactively using a new type of high-density plasma sputter source. The plasma beam used for sputtering is generated remotely and its path to the target defined by the orthogonal locations of two electromagnets: one at the orifice of the plasma tube and the other just beneath the target plane. To accommodate very large batches of substrates, the trade-off between load capacity and deposition rates was evaluated. The effect on deposition rate was determined by moving the plasma source away from the target in one direction and by moving the target assembly away in an orthogonal direction. A simple methodology was used to reestablish the reactive deposition rate and oxide quality even when large changes were made to the chamber geometry. Deposition parameters were established to produce nonabsorbing niobium oxide films of about 100- and 350-nm thicknesses. The quality of the niobium oxide films was studied spectroscopically, ellipsometrically, and stoichiometrically.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 889964
- Report Number(s):
- UCRL-CONF-219431; TRN: US200620%%169
- Resource Relation:
- Conference: Presented at: 49th Annual SVC Technical Conference, Washington, DC, United States, Apr 22 - Apr 27, 2006
- Country of Publication:
- United States
- Language:
- English
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