Electron Dynamics of Silicon Surface States: Second-Harmonic HoleBurning on Si(111)7x7

Journal Article · Mon Jun 06 00:00:00 EDT 2005 · Physical Review Letters

OSTI ID:882077

McGuire, John A; Raschke, Markus B; Shen, Yuen-Ron

The ultrafast dynamics of electronic excitations of the surface dangling bond states of Si(111) 7 x 7 has been investigated by second harmonic generation as a probe of transient spectral hole burning. Spectral holes induced by a 100 fs pump at {approx_equal} 1.5 eV and their decay are interpreted in terms of electronic dephasing times as short as 15 fs. This fast time scale together with the strong excitation-induced dephasing observed is interpreted in terms of carrier-carrier scattering. In addition, strong coupling of the electronic excitation to surface optical phonons is observed and attributed to the localization at adatom sites of a surface electronic excitation and a surface phonon mode.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Director. Office of Science. Office of Basic EnergySciences. Materials Science and Engineering Division
• DOE Contract Number: DE-AC02-05CH11231
• OSTI ID: 882077
• Report Number(s): LBNL-57675; PRLTAO; R&D Project: 506001; BnR: KC0202020; TRN: US200613%%572
• Journal Information: Physical Review Letters, Vol. 96; Related Information: Journal Publication Date: 02/28/2006; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DECAY
ELECTRONS
EXCITATION
HARMONIC GENERATION
PHONONS
PROBES
SCATTERING
SILICON
TRANSIENTS
ultrafast spectroscopy surface second-harmonic generationspectral hole burning dynamic dephasing Si(111)7x7 silicon surfacestates