Method of making an icosahedral boride structure

Patent · Tue Jan 11 00:00:00 EST 2005

OSTI ID:879999

Hersee, Stephen D ^[1]; Wang, Ronghua ^[2]; Zubia, David ^[3]; Aselage, Terrance L ^[4]; Emin, David ^[5]

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1. 3712 Silver Ave. SE., Albuquerque, NM 87108
2. 939 Buena Vista Dr., SE., Apt. F203, Albuquerque, NM 87106
3. 4409 Buckingham Dr., El Paso, TX 79902
4. 62 Avenida Del Sol, Cedar Crest, NM 87008
5. 1502 Harvard Ct. NE., Albuquerque, NM 87106

A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B.sub.12 P.sub.2) or boron arsenide (B.sub.12 As.sub.2). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of B.sub.12 P.sub.2 with a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of B.sub.12 As.sub.2 with a base layer or substrate of SiC is provided. In yet another aspect, thin films of B.sub.12 P.sub.2 or B.sub.12 As.sub.2 are formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050.degree. C., more preferably in the range of 1100.degree. C. to 1400.degree. C., and still more preferably approximately 1150.degree. C.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• Assignee: OSTI
• Patent Number(s): US 6,841,456
• Application Number: 10/418018
• OSTI ID: 879999
• Country of Publication: United States
• Language: English