Low Temperature Chemical Vapor Deposition Of Thin Film Magnets
- Salt Lake City, UT
A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.
- Research Organization:
- Univ. of Utah, Salt Lake City, UT (United States)
- DOE Contract Number:
- FG03-93ER45504
- Assignee:
- University of Utah Research Foundation (Salt Lake City, UT)
- Patent Number(s):
- US 6,660,375
- Application Number:
- 10/089480
- OSTI ID:
- 879756
- Country of Publication:
- United States
- Language:
- English
Similar Records
ORganometallic-based molecular magnets
Characterization of the charge-transfer reaction between decamethylferrocene and 7,7,8,8-tetracyano-p-quinodimethane (1:1). The /sup 57/Fe moessbauer spectra and structures of the paramagnetic dimeric and the metamagnetic one-dimensional salts and the molecular and electronic structures of (TCNQ)/sup n/ (n = 0, -1, -2)