Application Of Optical Processing For Growth Of Silicon Dioxide

Patent · Tue Jun 17 00:00:00 EDT 1997

OSTI ID:879324

Sopori, Bhushan L ^[1]

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1. Denver, CO

A process for producing a silicon dioxide film on a surface of a silicon substrate. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm.sup.2 to about 6 watts/cm.sup.2 for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm.sup.2 for growth of a 100.ANG.-300.ANG. film at a resultant temperature of about 400.degree. C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO.sub.2 /Si interface to be very low.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• DOE Contract Number: AC36-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 5,639,520
• Application Number: 08/592600
• OSTI ID: 879324
• Country of Publication: United States
• Language: English