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Title: Beta cell device using icosahedral boride compounds

Patent ·
OSTI ID:874875
 [1];  [2]
  1. 62 Avenida Del Sol, Cedar Crest, NM 87008
  2. 1502 Harvard Ct., NE., Albuquerque, NM 87106-3712

A beta cell for converting beta-particle energies into electrical energy having a semiconductor junction that incorporates an icosahedral boride compound selected from B.sub.12 As.sub.2, B.sub.12 P.sub.2, elemental boron having an .alpha.-rhombohedral structure, elemental boron having a .beta.-rhombohedral structure, and boron carbides of the chemical formula B.sub.12-x C.sub.3-x, where 0.15<1.7, a beta radiation source, and means for transmitting electrical energy to an outside load. The icosahedral boride compound self-heals, resisting degradation from radiation damage.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Aselage; Terrence L. (62 Avenida Del Sol, Cedar Crest, NM 87008); Emin; David (1502 Harvard Ct., NE., Albuquerque, NM 87106-3712)
Patent Number(s):
US 6479919
OSTI ID:
874875
Country of Publication:
United States
Language:
English

References (7)

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Bipolarons in boron icosahedra journal February 1987
Tritiated amorphous silicon films and devices
  • Kosteski, T.; Kherani, N. P.; Gaspari, F.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 2 https://doi.org/10.1116/1.581031
journal March 1998
Conduction mechanism in boron carbide journal April 1984
Thermal conductivity behavior of boron carbides journal May 1985
Spin susceptibility of boron carbides: Dissociation of singlet small bipolarons journal June 1996
Bipolarons in boron-rich icosahedra: Effects of carbon substitution journal June 1987