Semiconductor assisted metal deposition for nanolithography applications

Patent · Tue Jan 01 00:00:00 EST 2002

OSTI ID:874543

Rajh, Tijana ^[1]; Meshkov, Natalia ^[2]; Nedelijkovic, Jovan M ^[3]; Skubal, Laura R ^[4]; Tiede, David M ^[5]; Thurnauer, Marion ^[2]

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1. Naperville, IL
2. Downers Grove, IL
3. Belgrade, YU
4. West Brooklyn, IL
5. Elmhurst, IL

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL (United States)
• DOE Contract Number: W-31109-ENG-38
• Assignee: Argonne National Laboratory (Argonne, IL)
• Patent Number(s): US 6410935
• OSTI ID: 874543
• Country of Publication: United States
• Language: English

Related Subjects

semiconductor
assisted
metal
deposition
nanolithography
applications
article
manufacture
method
forming
nanoparticle
sized
material
components
oxide
substrate
nanoparticles
modifier
deposited
source
association
enabling
electronic
hole
scavenging
chelation
illuminated
reduction
particle size
metal deposition
oxide substrate
/257/438/