Method for forming porous platinum films

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:873332

Maya, Leon ^[1]

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1. Oak Ridge, TN

A method for forming a platinum film includes providing a substrate, sputtering a crystalline platinum oxide layer over at least a portion of the substrate, and reducing the crystalline platinum oxide layer to form the platinum film. A device includes a non-conductive substrate and a platinum layer having a density of between about 2 and 5 g/cm.sup.3 formed over at least a portion of the non-conductive substrate. The platinum films produced in accordance with the present invention provide porous films suitable for use as electrodes, yet require few processing steps. Thus, such films are less costly. Such films may be formed on both conductive and non-conductive substrates. While the invention has been illustrated with platinum, other metals, such as noble metals, that form a low density oxide when reactively sputtered may also be used.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-96OR22464
• Assignee: UT-Battelle, LLC (Oak Ridge, TN)
• Patent Number(s): US 6136704
• OSTI ID: 873332
• Country of Publication: United States
• Language: English

Related Subjects

method
forming
porous
platinum
films
film
providing
substrate
sputtering
crystalline
oxide
layer
portion
reducing
form
device
non-conductive
density
cm
formed
produced
accordance
provide
suitable
electrodes
require
processing
steps
costly
conductive
substrates
illustrated
metals
noble
reactively
sputtered
noble metals
conductive substrate
noble metal
oxide layer
processing steps
processing step
non-conductive substrate
non-conductive substrates
films produced
forming porous
porous film
platinum film
platinum oxide
crystalline platinum
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