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Title: Silicon cells made by self-aligned selective-emitter plasma-etchback process

Patent ·
OSTI ID:873104
 [1];  [1];  [1];  [1]
  1. Albuquerque, NM
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Photovoltaic cells and methods for making them are disclosed wherein the metallized grids of the cells are used to mask portions of cell emitter regions to allow selective etching of phosphorus-doped emitter regions. The preferred etchant is SF.sub.6 or a combination of SF.sub.6 and O.sub.2. This self-aligned selective etching allows for enhanced blue response (versus cells with uniform heavy doping of the emitter) while preserving heavier doping in the region beneath the gridlines needed for low contact resistance. Embodiments are disclosed for making cells with or without textured surfaces. Optional steps include plasma hydrogenation and PECVD nitride deposition, each of which are suited to customized applications for requirements of given cells to be manufactured. The techniques disclosed could replace expensive and difficult alignment methodologies used to obtain selectively etched emitters, and they may be easily integrated with existing plasma processing methods and techniques of the invention may be accomplished in a single plasma-processing chamber.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 6091021
OSTI ID:
873104
Country of Publication:
United States
Language:
English

References (6)

Surface texturing using reactive ion etching for multicrystalline silicon solar cells conference January 1997
Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics journal January 1997
A statistical analysis of the effect of PECVD deposition parameters on surface and bulk recombination in silicon solar cells
  • Ruby, D. S.; Wilbanks, W. L.; Fieddermann, C. B.
  • Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) https://doi.org/10.1109/WCPEC.1994.520193
conference January 1994
Recent progress on the self-aligned, selective-emitter silicon solar cell conference January 1997
Surface texturing of large area multicrystalline silicon solar cells using reactive ion etching method journal November 1997
Optimization of plasma deposition and etching processes for commercial multicrystalline silicon solar cells conference January 1996

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silicon
cells
self-aligned
selective-emitter
plasma-etchback
process
photovoltaic
methods
disclosed
metallized
grids
mask
portions
cell
emitter
regions
allow
selective
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phosphorus-doped
preferred
etchant
sf
combination
allows
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blue
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versus
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beneath
gridlines
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embodiments
textured
surfaces
optional
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plasma
hydrogenation
pecvd
nitride
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suited
customized
applications
requirements
manufactured
techniques
replace
expensive
difficult
alignment
methodologies
obtain
selectively
etched
emitters
easily
integrated
existing
processing
accomplished
single
plasma-processing
chamber
selective etching
emitter region
processing methods
silicon cells
processing method
textured surface
processing chamber
photovoltaic cells
plasma process
plasma processing
photovoltaic cell
contact resistance
selectively etched
selective etch
single plasma
easily integrated
metallized grid
silicon cell
alignment method
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