Focused ion beam system

Patent · Fri Jan 01 00:00:00 EST 1999

OSTI ID:872490

Leung, Ka-Ngo ^[1]; Gough, Richard A ^[2]; Ji, Qing ^[3]; Lee, Yung-Hee Yvette ^[3]

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1. Hercules, CA
2. Kensington, CA
3. Berkeley, CA

A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 5945677
• OSTI ID: 872490
• Country of Publication: United States
• Language: English

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focused
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fib
produces
final
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output
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microamps
increases
source
brightness
properly
configuring
plasma
extraction
electrodes
electrode
configured
aperture
diameter
thickness
aspect
ratio
additional
accelerator
focusing
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five
providing
compact
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multibeamlet
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nanolithography
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applications
fabrication
semiconductor
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minimum
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semiconductor devices
spot size
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final beam
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