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Title: Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 thin films and powders

Patent ·
OSTI ID:872096
 [1]
  1. Albuquerque, NM
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A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650.degree. C. and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5858451
OSTI ID:
872096
Country of Publication:
United States
Language:
English

References (5)

Solution-sol-gel processing of lead magnesium niobate thin films journal August 1990
La0.5Sr0.5CoO3 electrode technology for Pb(Zr,Ti)O3 thin film nonvolatile memories journal December 1995
Ammoniacal Synthesis of Lanthanum Aryloxide Complexes and Observation of a Unique Interconversion between Oxygen- and .eta.-Arene-Bridged Dimeric Species. X-ray Crystal Structures of La2(OAr)6(NH3)n (n = 0, 2), La(OAr)3(NH3)4, and La(OAr)3(THF)2 (Ar = 2,6-i-Pr2C6H3) journal October 1995
Structural Investigations of Prehydrolyzed Precursors Used in the Sol-Gel Processing of Lead Titanate journal August 1990
Films of 60/40 PZT by the mod process for memory applications journal July 1991

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pb
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simple
rapid
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standard
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commercially available
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rapid process
perovskite phase
ferroelectric material
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