Process for growing a film epitaxially upon a MGO surface and structures formed with the process

Patent · Thu Jan 01 00:00:00 EST 1998

OSTI ID:872023

McKee, Rodney Allen ^[1]; Walker, Frederick Joseph ^[2]

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1. Kingston, TN
2. Oak Ridge, TN

A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Assignee: Lockheed Martin Energy Systems, Inc. (Oak Ridge, TN)
• Patent Number(s): US 5846667
• OSTI ID: 872023
• Country of Publication: United States
• Language: English

Related Subjects

process
growing
film
epitaxially
mgo
surface
structures
formed
structure
optical
quality
perovskites
batio
srtio
grown
single
crystal
substrate
involves
epitaxial
build
alternating
planes
metal
oxide
plane
layering
sequence
involved
reduces
otherwise
result
interfacial
electrostatics
atomic
layers
oxides
stabilized
commensurate
films
unit
cell
thickness
thicknesses
5-0
device
applications
structures formed
atomic layers
cell thickness
sequence involved
crystal quality
layering sequence
device applications
metal oxide
single crystal
optical device
otherwise result
unit cell
optical quality
mgo substrate
epitaxial build
interfacial electrostatics
film build
film epitaxially
quality perovskites
mgo surface
substrate involves
alternating planes
crystal mgo
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