Silicon on insulator with active buried regions

Patent · Tue Jun 02 00:00:00 EDT 1998

OSTI ID:871598

McCarthy, Anthony M ^[1]

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1. Menlo Park, CA

A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 5760443
• Application Number: 08/547080
• OSTI ID: 871598
• Country of Publication: United States
• Language: English

Related Subjects

silicon
insulator
active
buried
regions
method
forming
patterned
components
collectors
sources
drains
silicon-on-insulator
soi
devices
carried
epitaxially
growing
suitable
sequence
single
multiple
etch
stop
layers
layer
substrate
masking
desired
pattern
exposed
introducing
dopant
activating
form
doped
bonding
removing
additionally
involves
electrical
contact
etch stop
top layer
silicon layer
electrical contact
silicon substrate
involves forming
desired pattern
stop layer
method additionally
insulator substrate
doped regions
forming electrical
patterned buried
epitaxially growing
introducing dopant
suitable sequence
forming patterned
buried regions
buried components
active buried
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