Fabrication of polycrystalline thin films by pulsed laser processing

Patent · Tue Feb 03 00:00:00 EST 1998

OSTI ID:871351

Mitlitsky, Fred ^[1]; Truher, Joel B ^[2]; Kaschmitter, James L ^[3]; Colella, Nicholas J ^[1]

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1. Livermore, CA
2. San Rafael, CA
3. Pleasanton, CA

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 5714404
• Application Number: 08/154347
• OSTI ID: 871351
• Country of Publication: United States
• Language: English

Related Subjects

fabrication
polycrystalline
films
pulsed
laser
processing
method
fabricating
low-temperature
high-temperature
substrates
temperatures
avoid
damage
substrate
transiently
heating
select
layers
pulse
homogenized
beam
source
length
selected
heated
temperature
allows
recrystallization
dopant
activation
maintaining
sufficiently
particularly
applicable
solar
cells
avoid damage
pulse length
particularly applicable
solar cell
solar cells
pulsed laser
beam source
processing temperatures
laser processing
processing temperature
fabricating polycrystalline
/438/