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Title: Monocrystalline test structures, and use for calibrating instruments

Patent ·
OSTI ID:871213

An improved test structure for measurement of width of conductive lines formed on substrates as performed in semiconductor fabrication, and for calibrating instruments for such measurements, is formed from a monocrystalline starting material, having an insulative layer formed beneath its surface by ion implantation or the equivalent, leaving a monocrystalline layer on the surface. The monocrystalline surface layer is then processed by preferential etching to accurately define components of the test structure. The substrate can be removed from the rear side of the insulative layer to form a transparent window, such that the test structure can be inspected by transmissive-optical techniques. Measurements made using electrical and optical techniques can be correlated with other measurements, including measurements made using scanning probe microscopy.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-76
Assignee:
United States of America as represented by Secretary of Commerce (Washington, DC)
Patent Number(s):
US 5684301
OSTI ID:
871213
Country of Publication:
United States
Language:
English

References (2)

Metrology of Atomic Force Microscopy for Si Nano-Structures journal June 1995
A new test structure for the electrical measurement of the width of short features with arbitrarily wide voltage taps journal June 1992