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Title: Process for preparing group Ib-IIIa-VIa semiconducting films

Patent ·
OSTI ID:871169
 [1];  [2];  [2];  [2]
  1. Churchville, MD
  2. Newark, DE
+ Show Author Affiliations

Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells.

Research Organization:
Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-83CH10093
Assignee:
University of Delaware (Newark, DE)
Patent Number(s):
US 5674555
Application Number:
08/564,957
OSTI ID:
871169
Country of Publication:
United States
Language:
English

References (2)

Characterization of Cu-In-Ga precursors used to form Cu(In,Ga)Se/sub 2/ films
  • Marudachalam, M.; Birkmire, R.; Schultz, J. M.
  • Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) https://doi.org/10.1109/WCPEC.1994.519851
conference January 1994
Preparation of homogeneous Cu(InGa)Se 2 films by selenization of metal precursors in H 2 Se atmosphere journal December 1995

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