Susceptor for EFG crystal growth apparatus

Patent · Tue Sep 03 00:00:00 EDT 1996

OSTI ID:870588

Menna, Andrew A ^[1]

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1. Belmont, MA

An improved susceptor for a crucible/die assembly for growing tubular crystalline structures by the EFG process is provided. The crucible/die assembly comprises a die having a substantially polygonally-shaped top end surface for supporting a film of silicon feed material that is replenished from a melt in the crucible through capillary action. A hollow crystalline body is grown from the film of silicon material on the top end surface of the die. The heat susceptor is made of graphite or similar material, and has a peripheral configuration similar to that of the die. Further, the upper surface of the heat susceptor has a central land and a plurality of circumferentially-spaced upwardly extending projections. The central land thermally contacts a central portion of the lower surface of the crucible/die, and the projections thermally contact the lower surface of the crucible/die at its corners, whereby a temperature distribution is provided that permits growth of hollow bodies having more nearly constant thickness walls.

• DOE Contract Number: NREL-ZM-2-11040-3
• Assignee: ASE Americas, Inc. (Billerica, MA)
• Patent Number(s): US 5551977
• Application Number: 339357
• OSTI ID: 870588
• Country of Publication: United States
• Language: English

Related Subjects

susceptor
efg
crystal
growth
apparatus
improved
crucible
die
assembly
growing
tubular
crystalline
structures
process
provided
comprises
substantially
polygonally-shaped
top
surface
supporting
film
silicon
feed
material
replenished
melt
capillary
action
hollow
grown
heat
graphite
similar
peripheral
configuration
upper
central
land
plurality
circumferentially-spaced
upwardly
extending
projections
thermally
contacts
portion
contact
corners
whereby
temperature
distribution
permits
bodies
nearly
constant
thickness
walls
silicon material
upwardly extending
crystalline structures
similar material
assembly comprises
upper surface
feed material
crystal growth
central portion
crystalline structure
nearly constant
capillary action
temperature distribution
die assembly
hollow crystalline
growth apparatus
thermally contact
efg crystal
efg process
line structure
/117/