skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Process for ion-assisted laser deposition of biaxially textured layer on substrate

Patent ·
OSTI ID:869972
 [1];  [2];  [3];  [4]
  1. Walnut Creek, CA
  2. Berkeley, CA
  3. Palo Alto, CA
  4. Oakland, CA
+ Show Author Affiliations

A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
DOE Contract Number:
AC03-76SF00098
Assignee:
Regents of University of California (Oakland, CA)
Patent Number(s):
US 5432151
OSTI ID:
869972
Country of Publication:
United States
Language:
English

References (15)

Laser deposition of biaxially textured yttria‐stabilized zirconia buffer layers on polycrystalline metallic alloys for high critical current Y‐Ba‐Cu‐O thin films journal November 1992
Critical current density enhancement in YBa 2 Cu 3 O 6.8 films on buffered metallic substrates journal March 1991
Metal buffer layers and Y‐Ba‐Cu‐O thin films on Pt and stainless steel using pulsed laser deposition journal August 1990
High critical current densities in YBa 2 Cu 3 O 7− x films on polycrystalline zirconia journal September 1990
High critical currents in strained epitaxial YBa 2 Cu 3 O 7−δ on Si journal September 1990
Observation of two in‐plane epitaxial states in YBa 2 Cu 3 O 7−δ films on yttria‐stabilized ZrO 2 journal May 1991
In situ single chamber laser processing of YBa 2 Cu 3 O 7−δ superconducting thin films on Si (100) with yttria‐stabilized zirconia buffer layers journal October 1990
In‐plane aligned YBa 2 Cu 3 O 7− x thin films deposited on polycrystalline metallic substrates journal February 1992
Sputter deposition of YBa 2 Cu 3 O 7− x films on Si at 500 °C with conducting metallic oxide as a buffer layer journal July 1990
Characterization of Y‐Ba‐Cu‐O thin films and yttria‐stabilized zirconia intermediate layers on metal alloys grown by pulsed laser deposition journal August 1991
Synthesis of superconducting YBa 2 Cu 3 O 7−δ thin films on nickel‐based superalloy using in situ pulsed laser deposition journal December 1990
In-plane texturing control of Y-Ba-Cu-O thin films on polycrystalline substrates by ion-beam-modified intermediate buffer layers journal March 1993
Theory of thin‐film orientation by ion bombardment during deposition journal December 1986
Biaxially Aligned YSZ Buffer Layer on Polycrystalline Substrates book January 1992
Angular magnetoresistance provides texture information on high-Tc conductors journal May 1992

Similar Records

Related Subjects

process
ion-assisted
laser
deposition
biaxially
textured
layer
substrate
depositing
aligned
intermediate
non-single
crystal
disclosed
permits
subsequent
thereon
oriented
superconducting
film
comprises
ablation
material
capable
inhibiting
migration
materials
simultaneously
bombarding
beam
preferred
embodiment
carried
chamber
subsequently
deposit
aspect
optional
additional
bombardment
coated
biaxially oriented
conducting layer
subsequent deposition
superconducting film
axially aligned
biaxially textured
substrate material
preferred embodiment
single crystal
process comprises
intermediate layer
laser ablation
comprises depositing
material capable
coated substrate
laser deposition
textured layer
oriented superconducting
crystal substrate
conducting film
deposition thereon
superconducting layer
subsequently deposit
axially align
/505/427/