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Title: Method of forming crystalline silicon devices on glass

Abstract

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

Inventors:
 [1]
  1. Menlo Park, CA
Publication Date:
Research Org.:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
OSTI Identifier:
869793
Patent Number(s):
US 5399231
Assignee:
Regents of University of California (Oakland, CA)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; forming; crystalline; silicon; devices; glass; fabricating; single-crystal; microelectronic; components; substrate; transferring; achieved; utilizing; conventional; processing; techniques; electronic; circuits; bulk; surface; prepared; epitaxial; layers; prior; bonded; removed; leaving; intact; subsequent; standard; completes; device; circuit; manufacturing; useful; applications; requiring; transparent; insulating; particularly; display; sensors; actuators; optoelectronics; radiation; hard; electronics; temperature; removed leaving; silicon device; applications requiring; electronic circuit; silicon substrate; substrate surface; glass substrate; crystalline silicon; silicon devices; bulk silicon; epitaxial layer; electronic components; processing techniques; crystal silicon; radiation hard; standard processing; utilizing conventional; single-crystal silicon; silicon surface; insulating substrate; electronic circuits; conventional processing; microelectronic component; microelectronic components; epitaxial layers; conventional process; silicon microelectronic; temperature electronic; processing technique; conventional silicon; /438/117/148/

Citation Formats

McCarthy, Anthony M. Method of forming crystalline silicon devices on glass. United States: N. p., 1995. Web.
McCarthy, Anthony M. Method of forming crystalline silicon devices on glass. United States.
McCarthy, Anthony M. 1995. "Method of forming crystalline silicon devices on glass". United States. https://www.osti.gov/servlets/purl/869793.
@article{osti_869793,
title = {Method of forming crystalline silicon devices on glass},
author = {McCarthy, Anthony M},
abstractNote = {A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.},
doi = {},
url = {https://www.osti.gov/biblio/869793}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1995},
month = {Sun Jan 01 00:00:00 EST 1995}
}

Works referenced in this record:

A technology for high-performance single-crystal silicon-on-insulator transistors
journal, April 1987


Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth
journal, July 1992


Laser crystallization of Si films on glass
journal, March 1982


Nanosecond Thermal Processing for Ultra-High-Speed Device Technology
journal, January 1989


Silicon-on-insulator (SOI) by bonding and ETCH-back
conference, January 1985