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Title: Method of deposition by molecular beam epitaxy

Patent ·
OSTI ID:869693
 [1];  [1];  [1]
  1. Albuquerque, NM
+ Show Author Affiliations

A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

Research Organization:
AT&T
DOE Contract Number:
AC04-76DP00789
Assignee:
Sandia National Laboratories (Albuquerque, NM)
Patent Number(s):
US 5379719
OSTI ID:
869693
Country of Publication:
United States
Language:
English

References (1)

A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors journal May 1991

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Related Subjects

method
deposition
molecular
beam
epitaxy
described
reproducibly
controlling
layer
thickness
varying
composition
process
particular
epitaxially
depositing
plurality
layers
material
substrate
growth
cycles
whereby
average
instantaneous
rates
cycle
remains
substantially
constant
function
time
growth rate
substantially constant
deposition process
molecular beam
beam epitaxy
layer thickness
remains substantially
growth rates
layer composition
/117/438/