Method of digital epilaxy by externally controlled closed-loop feedback
- Knoxville, TN
A method and apparatus for digital epitaxy. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- Assignee:
- Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
- Patent Number(s):
- US 5330610
- OSTI ID:
- 869390
- Country of Publication:
- United States
- Language:
- English
Atomic layer epitaxy
|
journal | August 1986 |
New approach to the atomic layer epitaxy of GaAs using a fast gas stream
|
journal | October 1988 |
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Apparatus for externally controlled closed-loop feedback digital epitaxy
Method of digital epitaxy by externally controlled closed-loop feedback
Related Subjects
digital
epilaxy
externally
controlled
closed-loop
feedback
apparatus
epitaxy
pulsed
gas
delivery
assembly
supplies
gaseous
material
substrate
form
adsorption
layer
structure
provided
measuring
isothermal
desorption
spectrum
growth
surface
monitor
active
sites
available
vacuum
chamber
housing
facilitates
evacuation
adjacent
following
exposure
achieved
exposing
pulse
monitored
formation
determine
filled
terminated
unreacted
portion
evacuated
continuous
pumping
subsequently
applied
availability
determined
studying
steps
repeated
film
sufficient
thickness
produced
adsorption layer
pulsed gas
chamber housing
continuous pumping
growth surface
sufficient thickness
active sites
vacuum chamber
gaseous material
gas delivery
substrate following
digital epitaxy
closed-loop feedback
gas pulse
supplies gaseous
thermal desorption
externally controlled
loop feedback
controlled closed-loop
delivery assembly
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