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Title: Electrochemical thinning of silicon

Patent ·
OSTI ID:869119
 [1]
  1. Albuquerque, NM
+ Show Author Affiliations

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

Research Organization:
AT&T
DOE Contract Number:
AC04-76DP00789
Assignee:
United States of America as represented by Department of Energy (Washington, DC)
Patent Number(s):
US 5277769
OSTI ID:
869119
Country of Publication:
United States
Language:
English

References (10)

Determination of micro amounts of oxygen in silicon by inert-gas fusion journal October 1983
SIMS Measurements of Oxygen in Heavily-Doped Silicon journal January 1985
Free Carrier Absorption and Interstitial Oxygen Measurements book January 1987
The Calibration and Reproducibility of Oxygen Concentration in Silicon Measurements using Sims Characterization Technique book January 1989
Oxygen Precipitation in Heavily Doped Silicon journal February 1990
Direct Comparison of FTIR and SIMS Calibrations for [O] in Silicon journal January 1985
Porosity Determinations in Buried and Surface Layers of Porous Silicon journal January 1987
Infrared measurements of interstitial oxygen in heavily doped silicon journal June 1988
Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption journal January 1989
Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry journal July 1989

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Related Subjects

electrochemical
thinning
silicon
porous
semiconducting
material
formed
treatment
specimen
hydrofluoric
acid
anode
masked
etched
caustic
solution
oxidized
depending
structure
desired
thinned
patterned
insulated
electrical
conduits
subjected
tests
measurement
interstitial
oxygen
fourier
transform
infra-red
spectroscopy
ftir
caustic solution
hydrofluoric acid
conducting material
porous material
fourier transform
chemical treatment
semiconducting material
insulated electrical
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