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Title: Free-standing oxide superconducting articles

Patent ·
OSTI ID:869069
 [1];  [2]
  1. Greenbelt, MD
  2. Espanola, NM
+ Show Author Affiliations

A substrate-free, free-standing epitaxially oriented superconductive film including a layer of a template material and a layer of a ceramic superconducting material is provided together with a method of making such a substrate-free ceramic superconductive film by coating an etchable material with a template layer, coating the template layer with a layer of a ceramic superconductive material, coating the layer of ceramic superconductive material with a protective material, removing the etchable material by an appropriate means so that the etchable material is separated from a composite structure including the template lay This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
DOE Contract Number:
W-7405-ENG-36
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 5270294
OSTI ID:
869069
Country of Publication:
United States
Language:
English

References (11)

In Situ RHEED Observation of CeO 2 Film Growth on Si by Laser Ablation Deposition in Ultrahigh-Vacuum journal July 1990
Crystalline Qualities and Critical Current Densities of As-Grown Ba 2 YCu 3 O x Thin Films on Silicon with Buffer Layers journal June 1990
Possible enhancement in bolometric response using free-standing film of YBa2Cu3Ox conference July 1991
Barrier technology for DyBa/sub 2/Cu/sub 3/O/sub 7-x/ junctions and related structures journal March 1991
Heteroepitaxial YBa/sub 2/Cu/sub 3/O/sub 7-x/-PrBa/sub 2/Cu/sub 3/O/sub 7-x/-YBa/sub 2/Cu/sub 3/O/sub 7-x/ weak links grown by laser deposition journal November 1989
Epitaxial CeO 2 films as buffer layers for high‐temperature superconducting thin films journal May 1991
Heteroepitaxial Growth of CeO 2 (001) Films on Si(001) Substrates by Pulsed Laser Deposition in Ultrahigh Vacuum journal June 1991
Epitaxial growth of CeO 2 layers on silicon journal April 1990
High critical currents in strained epitaxial YBa 2 Cu 3 O 7−δ on Si journal September 1990
Freestanding thick films of YBa 2 Cu 3 O 6.9 by screenprinting techniques journal June 1989
Y 1 Ba 2 Cu 3 O 7− x thin films grown on sapphire with epitaxial MgO buffer layers journal July 1990

Similar Records

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free-standing
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etchable
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appropriate
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separated
composite
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contract
department
energy
w-7405-eng-36
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