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Title: Microwave sintering of nanophase ceramics without concomitant grain growth

Patent ·
OSTI ID:868828

A method of sintering nanocrystalline material is disclosed wherein the nanocrystalline material is microwaved to heat the material to a temperature less than about 70% of the melting point of the nanocrystalline material expressed in degrees K. This method produces sintered nanocrystalline material having a density greater than about 95% of theoretical and an average grain size not more than about 3 times the average grain size of the nanocrystalline material before sintering. Rutile TiO.sub.2 as well as various other ceramics have been prepared. Grain growth of as little as 1.67 times has resulted with densities of about 90% of theoretical.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
DOE Contract Number:
W-31109-ENG-38
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 5223186
OSTI ID:
868828
Country of Publication:
United States
Language:
English

References (2)

Sintering characteristics of nanocrystalline TiO 2 journal March 1990
Microwave Sintering of Partially Stabilized Zirconia journal January 1988