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Title: Tunnel junction multiple wavelength light-emitting diodes

Patent ·
OSTI ID:868557
 [1];  [2]
  1. Lakewood, CO
  2. Golden, CO
+ Show Author Affiliations

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

Research Organization:
Midwest Research Institute, Kansas City, MO (United States)
DOE Contract Number:
AC02-83CH10093
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 5166761
OSTI ID:
868557
Country of Publication:
United States
Language:
English

References (2)

The GaAs P-N-P-N laser diode journal July 1974
Planar beam-lead gallium arsenide electroluminescent arrays journal October 1967

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Related Subjects

tunnel
junction
multiple
wavelength
light-emitting
diodes
led
monolithic
cascade
cell
structure
comprising
p-n
junctions
substantially
band
gaps
electrical
connector
means
collectively
energized
diode
comprises
interconnect
emitting diodes
emitting diode
p-n junctions
light-emitting diode
cell structure
tunnel junction
p-n junction
electrical connector
band gap
light-emitting diodes
structure comprising
multiple wavelength
band gaps
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