Thick, low-stress films, and coated substrates formed therefrom, and methods for making same

Patent · Wed Jan 01 00:00:00 EST 1992

OSTI ID:868506

Knoll, Robert W ^[1]

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1. Menomonee Falls, WI

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.

• Research Organization: Battelle Memorial Institute, Columbus, OH (United States)
• DOE Contract Number: AC06-76RL01830
• Assignee: Battelle Memorial Institute (Richland, WA)
• Patent Number(s): US 5156909
• OSTI ID: 868506
• Country of Publication: United States
• Language: English

Related Subjects

thick
low-stress
films
coated
substrates
formed
therefrom
methods
stress-induced
deformation
damage
resulting
increases
film
thickness
overcoming
excessive
stress
si-al-n
material
permits
formation
described
applications
subject
materials
specialized
views
optical
microelectronic
packaging
components
silicon
excellent
adherence
underlying
substrate
degree
hardness
durability
insulators
prior
elevated
temperature
deposition
processes
meet
constraints
process
conducted
non-elevated
conditions
typically
500
temperature deposition
formed therefrom
film materials
coated substrates
underlying substrate
silicon substrates
temperature conditions
thick film
film thickness
elevated temperature
silicon substrate
deposition process
film material
deposition processes
coated substrate
substrates formed
temperature formation
thick films
resulting therefrom
damage resulting
stress-induced deformation
induced deformation
excessive stress
low-stress films
/428/