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Title: Method for producing high energy electroluminescent devices

Patent ·
OSTI ID:868481
 [1];  [2]
  1. Yorktown Heights, NY
  2. Pleasantville, NY
+ Show Author Affiliations

A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.

DOE Contract Number:
SERI-ZZ-0-9319-1
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Number(s):
US 5151383
Application Number:
07/307,154
OSTI ID:
868481
Country of Publication:
United States
Language:
English

References (7)

DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD journal October 1981
Efficient visible photoluminescence in the binary a ‐Si:H x alloy system journal February 1983
The preparation of i n s i t u doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition journal March 1983
Post-hydrogenation of CVD deposited a-Si films journal January 1980
Defect compensation in doped CVD amorphous silicon journal January 1980
Efficient visible luminescence from hydrogenated amorphous silicon journal March 1983
Theta-Pinch Plasma Hydrogenation of Evaporated Amorphous Silicon Films journal October 1981

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method
producing
energy
electroluminescent
devices
described
fabricating
exhibiting
visible
electroluminescence
temperature
doped
layer
amorphous
hydrogenated
silicon
a-si
deposited
substrate
homogeneous
chemical
vapor
deposition
h-cvd
held
200
degree
in-situ
amount
hydrogen
incorporated
12-50
atomic
percent
bandgap
preferrable
embodiments
conductivity
chosen
accordance
device
requirements
10
16
-10
19
carriers
cm
depends
tuned
changing
atomic percent
chemical vapor
vapor deposition
doped layer
substrate temperature
electroluminescent devices
rate temperature
deposited layer
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