Method for reducing or eliminating interface defects in mismatched semiconductor eiplayers
- Ithaca, NY
The present invention and process relates to crystal lattice mismatched semiconductor composite having a first semiconductor layer and a second semiconductor growth layer deposited thereon to form an interface wherein the growth layer can be deposited at thicknesses in excess of the critical thickness, even up to about 10x critical thickness. Such composite has an interface which is substantially free of interface defects. For example, the size of the growth areas in a mismatched In.sub.0.05 Ga.sub.0.95 As/(001)GaAs interface was controlled by fabricating 2-.mu.m high pillars of various lateral geometries and lateral dimensions before the epitaxial deposition of 3500.ANG. of In.sub.0.05 Ga.sub.0.95 As. The linear dislocation density at the interface was reduced from >5000 dislocations/cm to about zero for 25-.mu.m lateral dimensions and to less than 800 dislocations/cm for lateral dimensions as large as 100 .mu.m. The fabricated pillars control the lateral dimensions of the growth layer and block the glide of misfit dislocations with the resultant decrease in dislocation density.
- Research Organization:
- Cornell Univ., Ithaca, NY (United States)
- DOE Contract Number:
- FG02-86ER45278
- Assignee:
- Cornell Research Foundation, Inc. (Ithaca, NY)
- Patent Number(s):
- US 5032893
- OSTI ID:
- 867916
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
reducing
eliminating
interface
defects
mismatched
semiconductor
eiplayers
process
relates
crystal
lattice
composite
layer
growth
deposited
thereon
form
thicknesses
excess
critical
thickness
10x
substantially
free
example
size
05
95
001
gaas
controlled
fabricating
2-
pillars
various
lateral
geometries
dimensions
epitaxial
deposition
3500
ang
linear
dislocation
density
reduced
5000
dislocations
cm
zero
25-
800
100
fabricated
control
block
glide
misfit
resultant
decrease
substantially free
semiconductor layer
deposited thereon
layer deposited
crystal lattice
lateral dimensions
process relates
mismatched semiconductor
dislocation density
interface defects
semiconductor growth
semiconductor composite
epitaxial deposition
lattice mismatch
eliminating interface
lattice mismatched
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