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Title: Joining of SiC parts by polishing and hipping

Patent ·
OSTI ID:867379

A method of joining two pre-sintered pieces of silicon carbide is disclosed. It entails polishing the surfaces to be joined to a mirror-finish, fitting the polished surfaces together to form a composite structure, and then subjecting the composite structure to hot isostatic pressing under conditions which are sufficient to form a joint which is essentially indistinguishable from the original silicon carbide pieces.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
DOE Contract Number:
86-XSB-045C
Assignee:
Norton Company (Worcester, MA)
Patent Number(s):
US 4925608
Application Number:
07/249,791
OSTI ID:
867379
Country of Publication:
United States
Language:
English