Chemical vapor deposition of group IIIB metals

Patent · Sun Jan 01 00:00:00 EST 1989

OSTI ID:867186

Erbil, Ahmet ^[1]

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1. Atlanta, GA

Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.

• Research Organization: Georgia Inst. of Tech., Atlanta, GA
• DOE Contract Number: FG05-86ER45266
• Assignee: Georgia Tech Research Corporation (Atlanta, GA)
• Patent Number(s): US 4882206
• OSTI ID: 867186
• Country of Publication: United States
• Language: English

Related Subjects

chemical
vapor
deposition
iiib
metals
coatings
compounds
formed
heat
decomposable
organometallic
compound
formula
str1
metal
lanthanum
yttrium
alkyl
alkenyl
radical
containing
carbon
atoms
heated
substrate
decomposition
temperature
pure
obtained
sole
carried
nonoxidizing
conditions
intermetallic
telluride
deposited
tellurium
oxidizing conditions
chemical vapor
carbon atoms
vapor deposition
intermetallic compound
heated substrate
decomposition temperature
carbon atom
organometallic compound
intermetallic compounds
heat decomposable
pure metal
tellurium compound
iiib metals
metallic compound
decomposable organometallic
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