Method of fabricating optical waveguides by ion implantation doping
- Oak Ridge, TN
- Toney, AL
- Juelich, DE
A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4840816
- OSTI ID:
- 867006
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
fabricating
optical
waveguides
implantation
doping
high-quality
quality
oxide
crystals
controlled
epitaxial
recrystallization
provided
masked
linbo
implanted
concentrations
dopant
energies
350
kev
maintaining
crystal
near
liquid
nitrogen
temperature
produces
amorphous
ti-rich
nonequilibrium
phase
region
subsequent
thermal
annealing
water-saturated
oxygen
atmosphere
1000
degree
solid-phase
regrowth
crystalline
substrate
single
layer
results
incorporates
structure
standard
diffusion
techniques
excellent
properties
thermal annealing
optical waveguides
single crystalline
single crystal
crystal structure
optical waveguide
liquid nitrogen
optical quality
quality oxide
optical wave
oxide crystals
crystalline substrate
oxygen atmosphere
oxide crystal
crystalline layer
implantation doping
implanted region
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