Process for producing chalcogenide semiconductors

Patent · Thu Jan 01 00:00:00 EST 1987

OSTI ID:866137

Noufi, Rommel ^[1]; Chen, Yih-Wen ^[2]

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1. Westminster, CO
2. Omaha, NE

A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4642140
• OSTI ID: 866137
• Country of Publication: United States
• Language: English

Related Subjects

process
producing
chalcogenide
semiconductors
semiconductor
material
disclosed
forming
base
metal
layer
contacting
solution
ph
containing
chalcogen
chalcogenize
form
metal layer
semiconductor material
base metal
chalcogenide semiconductor
producing chalcogenide
/438/136/148/427/