Compensated amorphous silicon solar cell

Patent · Sat Jan 01 00:00:00 EST 1983

OSTI ID:864732

Devaud, Genevieve ^[1]

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1. 629 S. Humphrey Ave., Oak Park, IL 60304

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Assignee: Devaud, Genevieve (629 S. Humphrey Ave., Oak Park, IL 60304)
• Patent Number(s): US 4409424
• OSTI ID: 864732
• Country of Publication: United States
• Language: English

Related Subjects

compensated
amorphous
silicon
solar
cell
including
electrically
conductive
substrate
layer
glow
discharge
deposited
hydrogenated
regions
differing
conductivity
region
intrinsic
opposed
major
surfaces
surface
contacts
electrode
contacting
atmosphere
02
atom
percent
mono-atomic
boron
improved
disclosed
bf
doped
major surfaces
atom percent
intrinsic layer
cell including
conductive substrate
amorphous silicon
solar cell
electrically conductive
hydrogenated amorphous
glow discharge
silicon solar
major surface
surface contact
surface contacts
intrinsic hydrogenated
charge deposited
silicon region
compensated amorphous
/136/257/