Method for measuring the drift mobility in doped semiconductors

Patent · Fri Jan 01 00:00:00 EST 1982

OSTI ID:864151

Crandall, Richard S ^[1]

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1. Princeton, NJ

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.

• Research Organization: RCA Corp
• DOE Contract Number: AC03-78ET21074
• Assignee: RCA Corporation (New York, NY)
• Patent Number(s): US 4319187
• OSTI ID: 864151
• Country of Publication: United States
• Language: English

Related Subjects

method
measuring
drift
mobility
doped
semiconductors
majority
carriers
consists
current
transient
schottky-barrier
device
following
termination
forward
bias
pulse
example
amorphous
silicon
hydrogenated
material
phosphorous
particularly
useful
dielectric
relaxation
time
shorter
carrier
transit
solar
cells
material useful
transit time
amorphous silicon
solar cell
particularly useful
solar cells
material doped
hydrogenated material
relaxation time
drift mobility
majority carriers
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