Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering

Patent · Thu Jan 01 00:00:00 EST 1981

OSTI ID:863935

Gruen, Dieter M ^[1]; Krauss, Alan R ^[2]; Siskind, Barry ^[1]

---

1. Downers Grove, IL
2. Naperville, IL

A beam of ions is directed under control onto an insulating surface by supplying simultaneously a stream of electrons directed at the same surface in a quantity sufficient to neutralize the overall electric charge of the ion beam and result in a net zero current flow to the insulating surface. The ion beam is adapted particularly both to the implantation of ions in a uniform areal disposition over the insulating surface and to the sputtering of atoms or molecules of the insulator onto a substrate.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL (United States)
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4278890
• OSTI ID: 863935
• Country of Publication: United States
• Language: English

Related Subjects

method
means
directing
beam
insulating
surface
implantation
sputtering
directed
control
supplying
simultaneously
stream
electrons
quantity
sufficient
neutralize
overall
electric
charge
result
net
zero
current
flow
adapted
particularly
uniform
areal
disposition
atoms
molecules
insulator
substrate
electric charge
current flow
insulating surface
/250/204/