Radiation detection system using semiconductor detector with differential carrier trapping and mobility

Patent · Thu Jan 01 00:00:00 EST 1981

OSTI ID:863813

Whited, Richard C ^[1]

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1. Santa Barbara, CA

A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI.sub.2, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• DOE Contract Number: EY-76-C-08-1183
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4253023
• OSTI ID: 863813
• Country of Publication: United States
• Language: English

Related Subjects

radiation
detection
semiconductor
detector
differential
carrier
trapping
mobility
obtaining
improved
resolution
relatively
thick
detectors
hgi
exhibit
significant
amplifiers
measures
charge
collected
contribution
electrons
outputs
utilized
unfold
total
generated
response
event
charge collected
relatively thick
radiation detector
radiation detectors
radiation detection
semiconductor detector
improved resolution
semiconductor radiation
radiation event
obtaining improved
exhibit significant
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