Solar cell with a gallium nitride electrode

Patent · Mon Jan 01 00:00:00 EST 1979

OSTI ID:863284

Pankove, Jacques I ^[1]

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1. Princeton, NJ

A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

• Research Organization: RCA Labs., Princeton, NJ (USA)
• DOE Contract Number: EY-76-C-03-1286
• Assignee: RCA Corporation (New York, NY)
• Patent Number(s): US 4139858
• OSTI ID: 863284
• Country of Publication: United States
• Language: English

Related Subjects

solar
cell
gallium
nitride
electrode
comprises
silicon
p-n
junction
therein
transparent
conducting
n-type
layer
ohmic
contact
semiconductor
exposed
radiation
p-n junction
gallium nitride
solar cell
solar radiation
ohmic contact
n-type gallium
nitride layer
transparent conducting
nitride electrode
type gallium
junction therein
/136/148/257/