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Title: Giant, ultrafast optical switching based on an Insulator-to-MetalTransition in VO2 Nano-particles: Photo-activation of shape-controlledplasmons at 1.55 mu-m

Conference ·
OSTI ID:861973

A new generation of devices where the electronic, optical or magnetic state of a system can be controlled optically on the ultrafast timescale is one of the most compelling technological ramifications of the rapidly advancing field of strongly correlated electrons. However, for real-world applications it is also necessary to incorporate these compounds in appropriate environments (e.g. optical fibers or silicon-based electronics), to ensure compatibility with existing technologies (e.g. telecom wavelengths), room temperature operation and limited power densities. Here, we report on the study of the photo-activated optical switching in nanorods of strongly correlated VO{sub 2}. The particles are grown by ion-implantation and self-assembly within a Silica matrix or an optical fiber, operate at room temperature and can be switched between the insulating and metallic phase within less than 100 fs. The energy threshold to achieve switching corresponds to approximately 500 pJ within the core of a single mode fiber and is compatible with current diode technologies. Tailoring of the spherical/cylindrical geometry results in control of the spectral response of the system, which is dominated by the impulsive formation of a surface plasmon upon the insulator-to-metal transition. The response at the technologically important 1.55 {micro}m wavelength is in this way maximized.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Director. Office of Science. Office of Basic EnergySciences
DOE Contract Number:
DE-AC02-05CH11231
OSTI ID:
861973
Report Number(s):
LBNL-58619; R&D Project: 505801; BnR: KC0202020; TRN: US200620%%670
Resource Relation:
Conference: Ultrafast Phenomena XIV, Niigata, Japan, July25-30, 2004
Country of Publication:
United States
Language:
English