Effect of hydrostatic pressure on degradation of CdTe/CdMgTeheterostructures grown by molecular beam epitaxy on GaAs substrates

Journal Article · Wed Apr 18 00:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1360217· OSTI ID:860728

Wasik, D; Baj, M; Siwiec-Matuszyk, J; Gronkowski, J; Jasinski, J; Karczewski, G

We have shown that external hydrostatic pressure leads to the creation of structural defects, mainly in the vicinity of the II-VI/GaAs interface in the CdTe/Cd{sub 1-x}Mg{sub x}Te heterostructures grown by the molecular beam epitaxy method on GaAs substrates. These defects propagating across the epilayer cause permanent damage to the samples from the point of view of their electrical properties. In contrast, photoluminescence spectra are only weakly influenced by pressure. Our results shed light on the degradation process observed even without pressure in II-VI-based heterostructures.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Director. Office of Science. Office of Basic EnergySciences. Materials Sciences Division; Polish State Committee forScientific Research Grant 2 P03B05215
• DOE Contract Number: DE-AC02-05CH11231
• OSTI ID: 860728
• Report Number(s): LBNL-47758; JAPIAU; R&D Project: 513340; TRN: US200524%%295
• Journal Information: Journal of Applied Physics, Vol. 89, Issue 9; Related Information: Journal Publication Date: 05/01/2001; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEFECTS
ELECTRICAL PROPERTIES
HYDROSTATICS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SPECTRA
SUBSTRATES