Correlation of DLTS and Performance of GaInNAs Cells

Conference · Sat Jan 01 00:00:00 EST 2005

OSTI ID:860492

Kurtz, S; Johnston, S; Friedman, D; Ptak, A; Geisz, J; McMahon, W; Olson, J; Kibbler, A; Crandall, R; Ahrenkiel, R; Kramer, C; Young, M

A four-junction GaInP/GaAs/GaInAsN/Ge solar cell should be able to reach 40% efficiency if each of the junctions can be made with a quality similar to that demonstrated for GaAs. However, the GaInAsN subcell has shown poor performance. Deep-level transient spectroscopy (DLTS) can elucidate recombination centers in a material and could help identify the problem with the GaInAsN. So far, DLTS studies of GaInAsN have shown many peaks. In this paper we compare the performance of the GaInAsN solar cells with the DLTS spectra to identify which DLTS peak is correlated with the device performance.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99-GO10337
• OSTI ID: 860492
• Report Number(s): NREL/CP-520-36972; TRN: US200524%%215
• Resource Relation: Related Information: Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
EFFICIENCY
PERFORMANCE
RECOMBINATION
SOLAR CELLS
SPECTRA
SPECTROSCOPY
TRANSIENTS
SOLAR ENERGY
PV
DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS)
DEVICE PERFORMANCE
OPEN-CIRCUIT VOLTAGE (VOC)
PHOTOCURRENT
Solar Energy - Photovoltaics