U.S. Department of EnergyOffice of Scientific and Technical Information
High Performance InGaAsSb TPV Cells
Abstract
Lattice-matched 0.52 eV InGaAsSb/GaSb thermophotovoltaic (TPV) cells are grown using a multi-wafer metal-organic-chemical-vapor-deposition (MOCVD) system. MOCVD growth series of P/N junction epitaxial structures consisting of as many as 30 wafers demonstrate good run-to-run reproducibility, good uniformity across the wafer and exhibit high performance with open circuit voltages of {approx}300mV and fill factors of 70% at 25 C. Growth parameters, including temperature, surface preparation and substrate orientation, that directly affect growth have been optimized for the active 0.52 eV InGaAsSb region and GaSb confinement layers. Focus is on increasing TPV diode performance through architectural improvements, specifically by reducing the minority carrier recombination velocity at the emitter and base front and back interfaces. Work in support of incorporating a back surface reflector (BSR) including the growth of N/P diode architectures and the addition of a lattice-matched InAsSb etch stop layer for substrate removal and wafer bonding, is reported. The lattice matched InAsSb stop etch exhibits resiliency to the substrate removal and wafer bonding processes. Substantial improvement in carrier lifetime on test structures with P-type AlGaAsSb layers indicated incorporation of these layers into the TPV cell structure should provide significant improvement in open-circuit voltage. Addition of AlGaAsSb confinement layers to the standard P/Nmore »
- Authors:
- Publication Date:
- Research Org.:
- Lockheed Martin Corporation, Schenectady, NY 12301 (US)
- Sponsoring Org.:
- US Department of Energy (US)
- OSTI Identifier:
- 837460
- Report Number(s):
- LM-04K048
TRN: US200506%%149
- DOE Contract Number:
- AC 12-00-SN39357
- Resource Type:
- Technical Report
- Resource Relation:
- Other Information: PBD: 9 Jun 2004
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; BONDING; CARRIER LIFETIME; CONFINEMENT; FILL FACTORS; ORIENTATION; PERFORMANCE; RECOMBINATION; REMOVAL; SUBSTRATES; VELOCITY; THERMOPHOTOVOLTAICS; TPV
Citation Formats
Shellengarger, ZA, Taylor, GC, Martinelli, RU, and Carpinelli, JM. High Performance InGaAsSb TPV Cells. United States: N. p., 2004.
Web. doi:10.2172/837460.
Shellengarger, ZA, Taylor, GC, Martinelli, RU, & Carpinelli, JM. High Performance InGaAsSb TPV Cells. United States. https://doi.org/10.2172/837460
Shellengarger, ZA, Taylor, GC, Martinelli, RU, and Carpinelli, JM. 2004.
"High Performance InGaAsSb TPV Cells". United States. https://doi.org/10.2172/837460. https://www.osti.gov/servlets/purl/837460.
@article{osti_837460,
title = {High Performance InGaAsSb TPV Cells},
author = {Shellengarger, ZA and Taylor, GC and Martinelli, RU and Carpinelli, JM},
abstractNote = {Lattice-matched 0.52 eV InGaAsSb/GaSb thermophotovoltaic (TPV) cells are grown using a multi-wafer metal-organic-chemical-vapor-deposition (MOCVD) system. MOCVD growth series of P/N junction epitaxial structures consisting of as many as 30 wafers demonstrate good run-to-run reproducibility, good uniformity across the wafer and exhibit high performance with open circuit voltages of {approx}300mV and fill factors of 70% at 25 C. Growth parameters, including temperature, surface preparation and substrate orientation, that directly affect growth have been optimized for the active 0.52 eV InGaAsSb region and GaSb confinement layers. Focus is on increasing TPV diode performance through architectural improvements, specifically by reducing the minority carrier recombination velocity at the emitter and base front and back interfaces. Work in support of incorporating a back surface reflector (BSR) including the growth of N/P diode architectures and the addition of a lattice-matched InAsSb etch stop layer for substrate removal and wafer bonding, is reported. The lattice matched InAsSb stop etch exhibits resiliency to the substrate removal and wafer bonding processes. Substantial improvement in carrier lifetime on test structures with P-type AlGaAsSb layers indicated incorporation of these layers into the TPV cell structure should provide significant improvement in open-circuit voltage. Addition of AlGaAsSb confinement layers to the standard P/N cell structure gave some of the best InGaAsSb TPV cell results to date.},
doi = {10.2172/837460},
url = {https://www.osti.gov/biblio/837460},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jun 09 00:00:00 EDT 2004},
month = {Wed Jun 09 00:00:00 EDT 2004}
}