Indium nitride: A narrow gap semiconductor
The optical properties of wurtzite InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. All these three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free electron concentration of the sample. The peak energy exhibits a very weak hydrostatic pressure dependence and a small, anomalous blueshift with increasing temperature. The bandgap energies of In-rich InGaN alloys were found to be consistent with the narrow gap of InN. The bandgap bowing parameter was determined to be 1.43 eV in InGaN.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies. Materials Science and Engineering Division (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 803858
- Report Number(s):
- LBNL-51320; R&D Project: 513360; B& R KC0201030; TRN: US200301%%546
- Resource Relation:
- Conference: 26th International Conference on the Physics of Semiconductors (ICPS-26), Edinburgh (GB), 07/29/2002--08/02/2002; Other Information: PBD: 14 Aug 2002
- Country of Publication:
- United States
- Language:
- English
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