IV and CV curves for irradiated prototype BTeV silicon pixel sensors
Conference
·
OSTI ID:797075
The authors present IV and CV curves for irradiated prototype n{sup +}/n/p{sup +} silicon pixel sensors, intended for use in the BTeV experiment at Fermilab. They tested pixel sensors from various vendors and with two pixel isolation layouts: p-stop and p-spray. Results are based on exposure with 200 MeV protons up to 6 x 10{sup 14} protons/cm{sup 2}.
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC02-76CH03000
- OSTI ID:
- 797075
- Report Number(s):
- FERMILAB-Conf-02/148-E; TRN: US0201784
- Resource Relation:
- Conference: 2002 IEEE Nuclear and Space Radiation Effects Conference, Phoenix, AZ (US), 07/15/2002--07/19/2002; Other Information: PBD: 16 Jul 2002
- Country of Publication:
- United States
- Language:
- English
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