A study of thermal cycling and radiation effects on indium and solder bump bonds
The BTeV hybrid pixel detector is constructed of readout chips and sensor arrays which are developed separately. The detector is assembled by flip-chip mating of the two parts. This method requires the availability of highly reliable, reasonably low cost fine-pitch flip-chip attachment technology. We have tested the quality of two bump-bonding technologies; indium bumps (by Advanced Interconnect Technology Ltd. (AIT) of Hong Kong) and fluxless solder bumps (by MCNC in North Carolina, USA). The results have been presented elsewhere [1]. In this paper we describe tests we performed to further evaluate these technologies. We subjected 15 indium bump-bonded and 15 fluxless solder bump-bonded dummy detectors through a thermal cycle and then a dose of radiation to observe the effects of cooling, heating and radiation on bump-bonds. We also exercised the processes of HDI mounting and wire bonding to some of the dummy detectors to see the effect of these processes on bump bonds.
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC02-76CH03000
- OSTI ID:
- 789479
- Report Number(s):
- FERMILAB-Conf-01/377-E; TRN: US0111387
- Resource Relation:
- Conference: IEEE NSS2001, San Diego, CA (US), 11/04/2001--11/09/2001; Other Information: PBD: 11 Dec 2001
- Country of Publication:
- United States
- Language:
- English
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