Single Event Burnout in DC-DC Converters for the LHC Experiments
Conference
·
OSTI ID:786645
High voltage transistors in DC-DC converters are prone to catastrophic Single Event Burnout in the LHC radiation environment. This paper presents a systematic methodology to analyze single event effects sensitivity in converters and proposes solutions based on de-rating input voltage and output current or voltage.
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC02-76CH03000
- OSTI ID:
- 786645
- Report Number(s):
- FERMILAB-Conf-01/250-E; TRN: US0109033
- Resource Relation:
- Conference: RADECS 2001, Grenoble (FR), 09/10/2001--09/14/2001; Other Information: PBD: 24 Sep 2001
- Country of Publication:
- United States
- Language:
- English
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