Radiation tolerant circuits designed in 2 commercial 0.25{micro} CMOS processes
Conference
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OSTI ID:775510
- and others
Characterization of simple devices as well as complex circuits, in two commercial 0.25{micro} processes, demonstrates a high level (up to 58 Mrad) radiation tolerance of these technologies. They are also very likely to be immune to single event gate damage according to the results from 200 MeV-protons irradiation.
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC02-76CH03000
- OSTI ID:
- 775510
- Report Number(s):
- FERMILAB-Conf-01/026-E; TRN: US0101227
- Resource Relation:
- Conference: 6th European Conference on Radiation and its Effects on Components and Systems, Grenoble (FR), 09/10/2001--09/14/2001; Other Information: PBD: 8 Mar 2001
- Country of Publication:
- United States
- Language:
- English
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